1SS361F 2001-02-07 1/3 toshiba diode silicon epitaxial planar type 1SS361F ultra high speed switching applications small package : 1608 flat lead excellent in forward current and forward voltage characteristics : v f (3) = 0.9v (typ.) fast reverse recovery time : t rr = 1.6ns (typ.) small total capacitance : c t = 0.9pf (typ.) maximum ratings (ta = 25c) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ( * ) ma average forward current i o 100 ( * ) ma surge current (10ms) i fsm 2 ( * ) a power dissipation p 100 mw junction temperature t j 125 c storage temperature range t stg ? 55 125 c (*) unit rating. total rating = unit rating 1.5 electrical characteristics (ta = 25c) characteristic symbol test circuit test condition min typ. max unit v f (1) D i f = 1ma D 0.60 D v f (2) D i f = 10ma D 0.72 D forward voltage v f (3) D i f = 100ma D 0.90 1.20 v i r (1) D v r = 30v D D 0.1 reverse current i r (2) D v r = 80v D D 0.5 a total capacitance c t D v r = 0, f = 1mh z D 0.9 3.0 pf reverse recovery time t rr D i f = 10ma (fig.1) D 1.6 4.0 ns jedec D eiaj D toshiba D weight: 2.3 mg unit in mm toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge ne r al can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from it s use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707eaa1
1SS361F 2001-02-07 2/3 fig.1 reverse recovery time (t rr ) test circuit marking
1SS361F 2001-02-07 3/3
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